Berry phase in on-chip microhelix

Datum

13.12.2016

Zeit

10:00 - 11:00

Sprecher

Vivienne Engemaier

Zugehörigkeit

IFW Dresden

Sprache

en

Hauptthema

Materialien

Andere Themen

Materialien, Physik

Host

Kristina Krummer-Meier

Beschreibung

In this talk, I will present the design and fabrication of InGaAs/GaAs-based microhelices for the study of topological states of light. The strained InGaAs/GaAs bilayers were grown by molecular beam epitaxy (MBE). By using photolithography and etching, a nanostrip was prepared for rolling up into a microhelical structure [9]. The microhelices are known to be able to support spin-orbit coupling of light due to the spin precession in the helical trajectory, allowing for the occurrence of optical Berry phase and spin-Hall effect [7,8]. In contrast to previous reports where only one fixed Berry phase was generated and measured from one macroscopic helical structure, here a series of Berry phases can be obtained from on-chip microhelices by measuring at different windings via tapered fiber coupling. Challenges as charging effects and suppressed polarization states in context of thin layers are presented.

Links

• Seminars at the IFW

Letztmalig verändert: 13.12.2016, 08:45:25