Spin Orbit fields at the Fe/GaAs(001) interface

Datum

25.01.2017

Zeit

10:00 - 11:00

Sprecher

Prof. Christian H. Back

Zugehörigkeit

Lehrstuhl für Magnetismus und Magnetoelektronik, Universität Regensburg

Sprache

en

Hauptthema

Materialien

Andere Themen

Materialien

Host

Christine Malbrich

Beschreibung

Abstract Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through an in-plane charge current. Besides technological interest, the intricate processes involved in spin to charge conversion at interfaces have provoked theoretical and experimental efforts to disentangle the underlying mechanisms. Here we study a particularly simple single crystalline interface, Fe/GaAs(001). The structural and magnetic properties of this particular interface are well understood [1] and we have used it to demonstrate various effects related to interfacial spin orbit fields. First of all we demonstrate crystalline anisotropic magneto-resistance showing C2v symmetry [2], second we show anisotropic magneto-optic response [3]. Finally, we use ferromagnetic resonance based methods to investigate interfacial SOTs. We report the observation of robust SOT occuring at a single crystalline Fe/ GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable the spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.

Links

• Seminars at the IFW

Letztmalig verändert: 25.01.2017, 08:57:42