FTIR-ATR spectroscopy with novel microstructured single reflection elements (mSRE) basing on silicon wafers as internal reflection elements

Datum

25.08.2011

Zeit

13:00 - 14:00

Sprecher

Ulrich Kuenzelmann

Zugehörigkeit

TU Dresden

Serie

TUD nanoSeminar

Sprache

en

Hauptthema

Materialien

Andere Themen

Materialien

Host

G. Cuniberti

Beschreibung

Infrared spectroscopy provides information on composition, structure and thickness of bulk materials and thin layers. In particular the technique of attenuated total reflection-ATR in combination with Fourier transform infrared-FTIR spectroscopy enables in? situ measurements of thin layers and/or strongly absorbing substances at the totally reflecting interface of the highly refractive reflection elements-RE. Due to the relatively long path of the IR beam within a conventional multiple RE, their optical and spectral transmission as well as applicability are limited. Therefore novel microstructures single reflection elements-mSRE basing on silicon wafers have been developed and fabricated at IHM. The backside of a double side polished Si(100) wafers is structured with arrays of Si(111) facets by structure dependent anisotropic wet etch and used as very efficient optical windows of the RE with total reflection at the opposite (structure) side of the wafer. The spectral transmittance of the mSRE with a short and simple optical light path covers nearly the entire IR region. Both sides can be treated with any semiconductor/microsystem deposition and structuring technology. Chemical etching of SiO2 layers at mSREs and their chemical-mechanical polishing with nano-dispersions are characterized in? situ and other applications are demonstrated.

Letztmalig verändert: 09.08.2012, 10:12:16