FWI Institutskolloquium: Toward Energy Efficiency Electronics with Nanowire Transistors

Datum

23.06.2023

Zeit

10:30 - 12:00

Sprecher

Prof. Qing-Tai Zhao, Forschungszentrum Juelich

Sprache

en

Hauptthema

Materialien

Host

Shengqiang Zhou (2484), Susann Gebel (2345)

Beschreibung

Abstract: Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs due to their superior electrostatics. In this presentation, I will present our research on Si and GeSn nanowire GAA FETs. The horizontal Si nanowires have been scaled down to a diameter of 5 nm in our devices. The optimized process and device layout enable steep slope switching at cryogenic temperatures, which has significant implications for the development of cryogenic computing applications. We demonstrate the use of GeSn, which exhibits much higher carrier mobilities than silicon, by designing heterostructures for p-FET and n-FET with a vertical nanowire configuration. We show that the GeSn channel n-FET exhibits significantly higher electron mobility than the reference Ge devices. The low-temperature characteristics of the GeSn transistor also hold great potential for cryogenic applications.

Letztmalig verändert: 23.06.2023, 07:39:51