Advanced Thermal Processes for Future CMOS Devices

Datum

06.03.2012

Zeit

15:00 - 16:00

Sprecher

Dr. Wilfried Lerch

Zugehörigkeit

centrotherm thermal solutions GmbH & Co. KG, Blaubeuren

Sprache

de

Hauptthema

Physik

Andere Themen

Physik

Host

Fraunhofer CNT

Beschreibung

Thermal processes are some of the key processes in semiconductor manufacturing. The temperature-time cycle has changed radically over the past 10 years. Nowadays, Milli-Second Annealing (MSA) as an equipment technology provides temperature profiles which favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow, highly electrically-activated junctions. For the 45 nm technology node and beyond, precisely controlled gate under-diffusion together with low resistivity and abrupt profiles, are required for optimum device performance. Therefore various annealing schemes are under investigation for the formation of ultra-shallow, highly-electrically-activated and custom-shaped junctions with low residual defect concentrations.

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Letztmalig verändert: 22.02.2012, 16:34:34