Hard x-ray photoelectron spectroscopy: recent developments and new opportunities

Datum

25.01.2011

Zeit

16:40 - 18:10

Sprecher

Hao Tjeng

Zugehörigkeit

Max-Planck-Institut für Chemische Physik fester Stoffe und TUD, Institut für Festkörperphysik

Serie

TUD Physikalisches Kolloquium

Sprache

en

Hauptthema

Physik

Andere Themen

Physik

Beschreibung

Photoelectron spectroscopy is one of the most powerful techniques to determine the electronic structure of materials. It measures the occupied density of states, or, for strongly correlated systems, it probes the one-particle Green’s function. Knowledge of this fundamental quantity is the starting point for the understanding of many physical properties. Although well established for over 40 years, one the challenges of photoelectron spectroscopy remains it surface sensitivity. Typically, only the outer 5 to 15 Ångstrom of the sample is being probed. The surface obviously could have very different properties than the bulk, and if the interest is in the bulk material, then one faces a true difficult problem. In the last few years, efforts have been made world wide to increase the probing depth by utilizing hard-x-ray photons (6-10 keV). Probing depths up to 200 Ångstrom are now possible. In this talk I would like to present what kind of new and unexpected information can be gained with this modern version of photoelectron spectroscopy.

Letztmalig verändert: 19.01.2011, 18:27:08