FWI Institutkolloquium: "Materials and Concepts for Low Power Transistors"

Datum

16.06.2011

Zeit

10:30 - 12:00

Sprecher

Prof. Dr. Siegfried Mantl, Institut für Bio- und Nanosysteme (IBN1-IT), Forschungszentrum Jülich

Sprache

de

Hauptthema

Physik

Andere Themen

Physik

Host

Gebel, Susann

Beschreibung

Abstract: An overview will be presented on various concepts to lower the power consumption of transistors while increasing the device performance. In view of rapid down scaling short channel effects become more and more crucial. Therefore, novel materials have to be implemented. Examples for high mobility channel materials, high-k gate stacks and improved contacts will be presented. Planar partially depleted transistors will be replaced by either advanced fully depleted SOI transistors or three dimensional devices. Results of fully depleted SOI transistors as well as nanowire transistors will be discussed. In addition, concepts for even more energy efficient devices will be addressed. In this context, band-to-band tunneling transistors seem most promising although great challenges have to be overcome.

Letztmalig verändert: 16.06.2011, 09:35:03