BEGIN:VCALENDAR VERSION:2.0 PRODID:www.dresden-science-calendar.de METHOD:PUBLISH CALSCALE:GREGORIAN X-MICROSOFT-CALSCALE:GREGORIAN X-WR-TIMEZONE:Europe/Berlin BEGIN:VTIMEZONE TZID:Europe/Berlin X-LIC-LOCATION:Europe/Berlin BEGIN:DAYLIGHT TZNAME:CEST TZOFFSETFROM:+0100 TZOFFSETTO:+0200 DTSTART:19810329T030000 RRULE:FREQ=YEARLY;INTERVAL=1;BYMONTH=3;BYDAY=-1SU END:DAYLIGHT BEGIN:STANDARD TZNAME:CET TZOFFSETFROM:+0200 TZOFFSETTO:+0100 DTSTART:19961027T030000 RRULE:FREQ=YEARLY;INTERVAL=1;BYMONTH=10;BYDAY=-1SU END:STANDARD END:VTIMEZONE BEGIN:VEVENT UID:DSC-13428 DTSTART;TZID=Europe/Berlin:20170912T160000 SEQUENCE:1505203318 TRANSP:OPAQUE DTEND;TZID=Europe/Berlin:20170912T170000 URL:https://dresden-science-calendar.de/calendar/en/detail/13428 LOCATION:Andere\, SUMMARY:Williams: Keynote presentation: The Art and Science of Constructing a Physics-Based Memristor Model CLASS:PUBLIC DESCRIPTION:Speaker: Dr. Richard Stanley Williams\nInstitute of Speaker: He wlett-Packard Laboratories\, Palo Alto\, USA\nTopics:\nChemie\, Physik\, I nformatik\, Mathematik\, Elektro- u. Informationstechnik\, Maschinenwesen\ , Materialien\n Location:\n Name: Andere (Room 229\, Görgesbau)\n Stree t: \n City: \n Phone: \n Fax: \nDescription: Teil der Reihe/part of s erie: International Summer School Materials 4.0 - The digitally enabled at om to system revolution

Since the publication of “The Missing Memris tor Found” in 2008\, there have been many thousands of papers published on the topic of memristors. However\, very few of those have featured qua ntitative compact models of the circuit elements described. This is not a reflection of the maturity of the field but rather the difficulty of cons tructing an accurate and predictive compact mathematical model for an elec tronic circuit element that displays memristor behavior. This Lecture wil l provide a snapshot of the current state of memristor modeling. Such mod els are essential for designing and simulating complex integrated circuits that contain memristors\, and the types of applications being considered are increasing significantly. Although the fundamental equations that spe cify the device physics may be known\, they usually comprise a set of coup led nonlinear integro-differential equations that are extremely challengin g to solve in three dimensions\, and standard multi-physics solvers may no t have all the components needed for an accurate model. A numerical solut ion of the physics equations can require supercomputers and long execution times\, which makes this approach useless for interactive simulation of l arge circuits that contain many such elements. Thus\, the equations must be simplified dramatically\, and it is not always clear which terms are th e most important for the behavior of the device. On the other hand\, a pu rely black box approach of fitting a set of experimental measurements to a convenient functional form runs the risk of poorly representing the behav ior of the device in operating regimes outside the range in which the data were collected. Thus\, a hybrid approach is often necessary\, in which t he mathematical formalism for a memristor provides the framework for the m odel and knowledge of the device physics defines the state variable(s)\, o perating limits and asymptotic behavior necessary to make the model useful . After describing the challenge\, the art and science of constructing a m emristor model are illustrated by three examples: a description of a loca lly active and volatile device based on a thin film of niobium dioxide tha t undergoes both a thermal instability and an insulator to metal transitio n because of Joule heating\, the original description of a nonvolatile mem ory device based on titanium dioxide in which the effective width of an el ectron tunnel barrier is determined by oxygen vacancy drift caused by an a pplied electric field\, and the analysis of a ferromagnetic inductor as a mem-differential element.

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