Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films

Date

Feb 24, 2026

Time

9:00 AM - 10:00 AM

Speaker

Pavlo Makushko

Affiliation

Helmholtz Zentrum Dresden Rossendorf

Language

en

Main Topic

Materialien

Host

Martina Javorka

Description

The skyrocketing demand for computational power, endorsed by the advancements in artificial intelligence and neuromorphic computing, necessitates the development of beyond-CMOS spintronic devices that exhibit ultrafast non-volatile memory and logic capabilities in conjunction with pure voltage control of magnetic degree of freedom. These requirements can be satisfied through the use of magnetoelectric insulating antiferromagnets, serving as fundamental building blocks for the spintronic devices. This study explores the prospectives of room-temperature magnetoelectric antiferromagnet chromium oxide Cr2O3 in this field. The magnetic properties of chromia are being tailored by engineering the persistent epitaxial strain gradients. By combining the electrical transport with nitrogen vacancy magnetometry techniques, a number of novel fundamental phenomena were identified, namely the surface-induced symmetry break magnetization and a new type of flexomagnetic effect in chromia. The performed fundamental materials science studies have enabled the exploration of several technologically significant milestones, such as the electrical access to the magnetic state of strained magnetoelectric Cr2O3 and the increase of Neel temperature of insulating antiferromagnet via the engineered strain gradients. The Neel temperature of the epitaxially strained 50-nm-thick Cr2O3 increased from 37°C up to beyond 100°C, covering the requirements of consumer electronics.

Links

• Seminars at the IFW

Last modified: Feb 20, 2026, 7:35:39 AM