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DTSTART:19810329T030000
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DTSTART:19961027T030000
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UID:DSC-22890
DTSTART;TZID=Europe/Berlin:20260616T090000
SEQUENCE:1781328938
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20260616T100000
URL:https://dresden-science-calendar.de/calendar/en/detail/22890
LOCATION:IFW\, Helmholtzstraße 2001069 Dresden
SUMMARY:Xie: Revisiting Cu in Bi2Te3 based compounds
CLASS:PUBLIC
DESCRIPTION:Speaker: Dr. Wenjie Xie\nInstitute of Speaker: Technical Univer
 sity of Darmstadt\nTopics:\n\n Location:\n  Name: IFW (D2E.27\, IFW Dresde
 n)\n  Street: Helmholtzstraße 20\n  City: 01069 Dresden\n  Phone: \n  Fax
 : \nDescription: The effects of Cu impurities in bismuth telluride\, disco
 vered during thermoelectric device manufacturing\, have been known for dec
 ades. However\, the precise structural site occupied by Cu atoms and its r
 esulting doping mechanism remain unclear. Cu is observed to increase charg
 e carrier concentration in both p- and n-type Bi₂Te₃. This leads to tw
 o conflicting hypotheses: (1) Cu intercalates in the van der Waals gaps\, 
 acting as an electron donor\, or (2) Cu substitutes for Bi/Sb\, which woul
 d act as an electron acceptor—a model at odds with its n-type doping cap
 ability. This talk will elucidate these contradictory findings by employin
 g the framework of defect chemistry. We will use existing experimental dat
 a to develop a general model that explains the doping behavior of Cu in bi
 smuth telluride.
DTSTAMP:20260613T152959Z
CREATED:20260509T053610Z
LAST-MODIFIED:20260613T053538Z
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