FWI Institutskolloquium: Spin injection into Si and Ge with manganese-based ferromagnetic electrodes

Datum

02.11.2017

Zeit

10:30 - 12:00

Sprecher

PD Dr. Inga A. Fischer

Zugehörigkeit

Institute for Semiconductor Engineering/University of Stuttgart, Germany

Sprache

en

Hauptthema

Physik

Andere Themen

Physik

Host

S. Prucnal

Beschreibung

Abstract: Many device concepts utilizing spin-polarized carriers for logic applications require the injection of spin-polarized electrons into semiconductor channels. This can be achieved using ferromagnetic electrodes with or without a tunneling oxide barrier. The conductivity of the ferromagnetic metal Mn5Ge3 is comparable to that of highly doped Ge and its Curie temperature of ~300 K can be further increased by introducing C. Furthermore, the material can be fabricated by depositing Mn on Ge(111) and subsequent annealing, i.e. by a germanidation process which could potentially be compatible with complementary metal-oxide semiconductor (CMOS) fabrication processes. We present results on the characterization of Manganese-based electrodes and, using these electrodes as ferromagnetic contacts to bulk Ge as well as Si channels, discuss spin injection measurement results as well as future prospects.

Letztmalig verändert: 02.11.2017, 08:48:22