FWI Institutskolloquium: Spin injection into Si and Ge with manganese-based ferromagnetic electrodes

Date

Nov 2, 2017

Time

10:30 AM - 12:00 PM

Speaker

PD Dr. Inga A. Fischer

Affiliation

Institute for Semiconductor Engineering/University of Stuttgart, Germany

Language

en

Main Topic

Physik

Other Topics

Physik

Host

S. Prucnal

Description

Abstract: Many device concepts utilizing spin-polarized carriers for logic applications require the injection of spin-polarized electrons into semiconductor channels. This can be achieved using ferromagnetic electrodes with or without a tunneling oxide barrier. The conductivity of the ferromagnetic metal Mn5Ge3 is comparable to that of highly doped Ge and its Curie temperature of ~300 K can be further increased by introducing C. Furthermore, the material can be fabricated by depositing Mn on Ge(111) and subsequent annealing, i.e. by a germanidation process which could potentially be compatible with complementary metal-oxide semiconductor (CMOS) fabrication processes. We present results on the characterization of Manganese-based electrodes and, using these electrodes as ferromagnetic contacts to bulk Ge as well as Si channels, discuss spin injection measurement results as well as future prospects.

Last modified: Nov 2, 2017, 8:48:22 AM